Product name: | P-tert-butyloxystyrene |
CAS NO.: | 95418-58-9 |
Structure: | |
Synonyms: | P-t-butoxystyrene;4-tert-butoxystyrene;p-tert-butoxystyrene;4-t-butoxystyrene;butoxy Styrene;4-tert-butoxystyene;1-vinyl-4-(tert-butyloxy)benzene;4-(tert-butyloxy)styrene |
MF: | C12H16O |
MW: | 176.25 |
Melting point : | −38 °C(lit.) |
Chemical Properties: | Clear colorless liquid |
Purity | 98% |
Capacity: | 500KG/month |
Package | In paper drums /Fluoride drums /iron drums /plastic drums/IBC Tank ,etc. |
Shipment method : | By Sea ,Air ,Courier door to door ,etc. |
Storeage: | Under room temperature ,keep away from direct sun light |
Loading Port : | China any port ,Beijing ,Shanghai ,Hongkong |
Transportation condition: | Shipped as non- dangerous chemicals |
Application: | Analog Semiconductors, Light-Emitting Diodes LEDs, Solar Photovoltaics PV |
Introduction
A photoresist is a light-sensitive material used in several processes, such as photolithography and photoengraving, to form a patterned coating on a surface. This process is crucial in the electronic industry.The process begins by coating a substrate with a light-sensitive organic material. A patterned mask is then applied to the surface to block light, so that only unmasked regions of the material will be exposed to light. A solvent, called a developer, is then applied to the surface.
In the case of a positive photoresist, the photo-sensitive material is degraded by light and the developer will dissolve away the regions that were exposed to light, leaving behind a coating where the mask was placed.
In the case of a negative photoresist, the photosensitive material is strengthened (either polymerized or cross-linked) by light, and the developer will dissolve away only the regions that were not exposed to light, leaving behind a coating in areas where the mask was not placed.
Based on the chemical structure of photoresists, they can be classified into three types: Photopolymeric, photodecomposing, photocrosslinking photoresist.
Photopolymeric photoresist is a type of photoresist, usually allyl monomer, which could generate free radical when exposed to light, then initiates the photopolymerization of monomer to produce a polymer. Photopolymeric photoresists are usually used for negative photoresist, e.g. methyl methacrylate.
Photopolymerization of methyl methacrylate monomers under UV that resulting into polymer
Photodecomposing photoresist is a type of photoresist that generates hydrophilic products under light. Photodecomposing photoresists are usually used for positive photoresist.
Photolysis of a dizaonaphthoquinone that leads to a much more polar environment, which allows aqueous base to dissolve a Bakelite-type polymer.
Photocrosslinking photoresist is a type of photoresist, which could crosslink chain by chain when exposed to light, to generate an insoluble network. Photocrosslinking photoresist are usually used for negative photoresist.
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