CAS NO.52217-52-4 7-Octenyltrichlorosilane

CAS NO.52217-52-4 7-Octenyltrichlorosilane

CAS NO.52217-52-4 7-Octenyltrichlorosilane BOILING POINT: 223-224° EINECS NUMBER: 257-747-2 MOLECULAR WEIGHT: 245.65 SPECIFIC GRAVITY: 1.07 FLASHPOINT: 94°C (201°F) HMIS KEY: 3-2-1-X HYDROLYTIC SENSITIVITY: 8: REACTS RAPIDLY WITH MOISTURE, WATER, PROTIC SOLVENTS FORMULA: C8H15CL3SI PURITY: 95%...
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Product Details

CAS NO.52217-52-4 7-Octenyltrichlorosilane Basic information

Product   Name

7-Octenyltrichlorosilane 

 

Synonyms

7-OCTENYLTRICHLOROSILANE;7-OCT-1-ENYLTRICHLOROSILANE;trichloro-7-octenyl-silan;trichloro-7-octenylsilane;7-OCTENYLTRICHLOROSILANE ,   CONTAINS 10-30% ISOMERS;7-OCTENYLTRICHLOROSILANE 97%;8-(Trichlorosilyl)-1-octene;7-OCTENYLTRICHLOROSILANE,   tech-95

 Structure  

52217-52-4.gif  

CAS   NO

52217-52-4

Appearance

Colorless   and transparent liquid

Assay

95%min

MF:

C8H15Cl3Si

MW

245.65

EINECS

257-747-2

Product   Categories

Organosilicon;Self Assembly&Contact Printing;Self-Assembly Materials;SilanesOrganometallic Reagents;Trialkoxysilanes; Chemical Synthesis;Contact Printing;Materials Science;Micro/NanoElectronics;Organometallic Reagents;Self Assembly &;Self-Assembly Materials;Silanes;

Storage  

Shading,   sealed, dry place.

Capacity

1000KG   /month

Package  

In   paper drums /Fluoride drums /iron drums /plastic drums/IBC Tank ,etc.

Shipment method  

By   Sea ,Air ,Courier door to door ,etc.

Loading   Port

China   any port ,Beijing ,Shanghai ,Hong Kong etc.

Application  

As   additive used in advanced functional materials.

 

CAS NO.52217-52-4 7-Octenyltrichlorosilane 

BOILING POINT: 223-224°

EINECS NUMBER: 257-747-2

MOLECULAR WEIGHT: 245.65

SPECIFIC GRAVITY: 1.07

FLASHPOINT: 94°C (201°F)

HMIS KEY: 3-2-1-X

HYDROLYTIC SENSITIVITY: 8: REACTS RAPIDLY WITH MOISTURE, WATER, PROTIC SOLVENTS

FORMULA: C8H15CL3SI

PURITY: 95%

REFRACTIVE INDEX: 1.4578

TSCA: TSCA

APPLICATION: IMMOBILIZES DNA AT TERMINUS.1

REFERENCE: 1. BENSIMON, A. ET AL. SCIENCE 1994, 265, 2096.

ADDITIONAL PROPERTIES: CONTAINS 10-15% INTERNAL OLEFIN ISOMERS

 

Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber.


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